Photodetector yihuta yatangijwe na InGaAs ifotora

Photodetector yihuta yatangijwe naInGaAs ifotora

Ifoto yihutamubijyanye n'itumanaho rya optique harimo cyane cyane III-V InGaAs ifotora hamwe na IV yuzuye Si na Ge /Si Photodetector. Iyambere ni gakondo hafi ya disiketi ya infragre, yiganje kuva kera, mugihe iyanyuma yifashisha tekinoroji ya optique ya silicon kugirango ibe inyenyeri izamuka, kandi ni ahantu hashyushye mubushakashatsi mpuzamahanga bwa optoelectronics mumyaka yashize. Mubyongeyeho, disiketi nshya ishingiye kuri perovskite, organic hamwe nibikoresho bibiri-bigenda bitera imbere byihuse kubera ibyiza byo gutunganya byoroshye, ibintu byoroshye kandi byoroshye. Hariho itandukaniro rikomeye hagati yibi bikoresho bishya hamwe na fotodetekeri gakondo ya organic organique mubintu bifatika nibikorwa byo gukora. Ibyuma bya Perovskite bifite ibimenyetso byiza byo kwinjiza urumuri hamwe nubushobozi bwo gutwara ibintu neza, ibikoresho byifashishwa mu gukoresha ibikoresho bya elegitoronike bidahenze kandi byoroshye, kandi ibyuma bipima ibice bibiri byitabiriwe cyane kubera imiterere yihariye yumubiri hamwe nubwikorezi bwikinyabiziga kinini. Nyamara, ugereranije na InGaAs na disiketi ya Si / Ge, disikete nshya ziracyakeneye kunozwa mubijyanye n’umutekano muremure, gukura mu nganda no kwishyira hamwe.

InGaAs nimwe mubikoresho byiza byo kumenya umuvuduko mwinshi hamwe na fotodekiteri isubiza cyane. Mbere ya byose, InGaAs ni ibikoresho bya semiconductor itaziguye, kandi ubugari bwayo bushobora kugengwa n’ikigereranyo kiri hagati ya In na Ga kugira ngo hamenyekane ibimenyetso bya optique by’uburebure butandukanye. Muri byo, In0.53Ga0.47Nkuko ihuye neza na lattice ya substrate ya InP, kandi ifite coefficente nini yo kwinjiza urumuri mumashanyarazi ya optique, niyo ikoreshwa cyane muguteguragufotora, kandi umwijima ugezweho hamwe no kwitabira gukora nabyo nibyiza. Icya kabiri, ibikoresho bya InGaAs na InP byombi bifite umuvuduko mwinshi wa electron, kandi umuvuduko wa electron wuzuye ni nka 1 × 107 cm / s. Mugihe kimwe, ibikoresho bya InGaAs na InP bigira ingaruka za electron umuvuduko mwinshi mumashanyarazi yihariye. Umuvuduko ukabije urashobora kugabanywamo 4 × 107cm / s na 6 × 107cm / s, ibyo bikaba bifasha kumenya icyerekezo kinini cyitwara igihe ntarengwa. Kugeza ubu, InGaAs ifotora ni yo nzira nyamukuru ifotora mu buryo bwitumanaho ryiza, kandi uburyo bwo guhuza impanuka bukoreshwa cyane ku isoko, kandi ibicuruzwa 25 bya Gbaud / s na 56 bya Gbaud / s byamenyekanye. Ingano ntoya, umugongo winyuma hamwe nubunini bunini bwikwirakwizwa ryikurikiranabikorwa nabyo byatejwe imbere, bikwiranye cyane cyane n'umuvuduko mwinshi hamwe no kwiyuzuza cyane. Nyamara, ibyabaye hejuru yubushakashatsi bigarukira kuburyo bwo guhuza kandi biragoye guhuza nibindi bikoresho bya optoelectronic. Kubwibyo, hamwe nogutezimbere ibyifuzo bya optoelectronic yoguhuza, waveguide ihujwe na Photodetector ya InGaAs ifite imikorere myiza kandi ibereye kwishyira hamwe yagiye ihinduka intumbero yubushakashatsi, muribwo ubucuruzi bwa 70 GHz na 110 GHz InGaAs modul ya Photoprobe hafi ya yose ikoresha ibyuma bifatanyiriza hamwe. Ukurikije ibikoresho bitandukanye bya substrate, guhuza umurongo wa waveguide InGaAs ifoto yamashanyarazi irashobora kugabanywamo ibyiciro bibiri: InP na Si. Ibikoresho bya epitaxial kuri InP substrate bifite ubuziranenge kandi birakwiriye mugutegura ibikoresho bikora neza. Nyamara, kudahuza gutandukanye hagati yibikoresho bya III-V, ibikoresho bya InGaAs hamwe na Si substrates ikura cyangwa ihujwe na Si substrate iganisha kubintu bitameze neza cyangwa ubuziranenge bwimiterere, kandi imikorere yigikoresho iracyafite icyumba kinini cyo kunoza.