Imashini zipima foto zihuta cyane zishyirwa ahagaragara na InGaAs photodetectors

Imashini zipima foto zihuta cyane zishyirwa ahagaragara naInGaAs foto detectors

Imashini zipima foto zihuta cyanemu rwego rw'itumanaho ry'amajwi harimo cyane cyane utwuma dupima amashusho twa III-V InGaAs na IV full Si na Ge/Si fotodecteur. Iya mbere ni imashini isanzwe ipima hafi ya infrared, imaze igihe kinini ikora cyane, mu gihe iya nyuma yishingikiriza ku ikoranabuhanga rya silikoni kugira ngo ibe inyenyeri izamuka, kandi ni ahantu hakomeye mu bushakashatsi mpuzamahanga ku byuma bipima urumuri mu myaka ya vuba aha. Byongeye kandi, imashini nshya zipima urumuri zishingiye ku bikoresho bya perovskite, organic n'ibipimo bibiri birimo gutera imbere vuba bitewe n'ibyiza byoroshye gutunganya, ubworoherane bwiza n'imiterere ishobora guhindurwa. Hari itandukaniro rinini hagati y'izi mashini nshya n'imashini zipima urumuri zisanzwe mu miterere y'ibikoresho n'imikorere yo mu nganda. Imashini zipima urumuri za Perovskite zifite imiterere myiza yo kwinjiza urumuri n'ubushobozi bwo gutwara neza umuriro, imashini zipima ibikoresho by'umwimerere zikoreshwa cyane kubera electron zazo zihendutse kandi zoroshye, kandi imashini zipima ibikoresho by'ibipimo bibiri zakunzwe cyane kubera imiterere yazo yihariye n'uburyo zigenda cyane. Ariko, ugereranije na InGaAs na Si/Ge, imashini nshya zipima urumuri ziracyakeneye kunozwa mu bijyanye no kugumana imbaraga mu gihe kirekire, gukura mu nganda no guhuza.

InGaAs ni kimwe mu bikoresho byiza byo gukora ibyuma bipima umuvuduko mwinshi n'ibisubizo byinshi. Mbere na mbere, InGaAs ni ibikoresho bya semiconductor bya bandgap bitaziguye, kandi ubugari bwa bandgap bushobora kugenzurwa n'ikigereranyo kiri hagati ya In na Ga kugira ngo hamenyekane ibimenyetso by'urumuri bitandukanye. Muri byo, In0.53Ga0.47As ihuye neza na lattice ya InP, kandi ifite coefficient nini yo kwinjiza urumuri mu gice cy'itumanaho cya optique, ari na cyo gikoreshwa cyane mu guteguragufotora, kandi imikorere y'umuraba wijimye n'uburyo ugaragara neza ni byo byiza cyane. Icya kabiri, ibikoresho bya InGaAs na InP byombi bifite umuvuduko mwinshi wa electron, kandi umuvuduko wabyo wa electron yuzuye ni hafi 1 × 107 cm / s. Muri icyo gihe, ibikoresho bya InGaAs na InP bifite ingaruka zo gushyuha cyane ku muvuduko wa electron munsi y'amashanyarazi yihariye. Umuvuduko wo gushyuha cyane ushobora kugabanywamo 4 × 107cm / s na 6 × 107cm / s, ibyo bikaba byorohereza kubona bandwidth nini y'igihe gito. Kuri ubu, InGaAs photodetector niyo ikoreshwa cyane mu itumanaho ry'amashusho, kandi uburyo bwo guhuza intera y'ubuso bukoreshwa cyane ku isoko, kandi ibikoresho byo kumenya intera y'ubuso bya 25 Gbaud / s na 56 Gbaud / s byarakozwe. Imashini nto, intera y'ubuso n'intera y'ubuso nini nazo zarakozwe, zikwiriye cyane cyane gukoreshwa mu kwihuta cyane no mu buryo bwo gushyuha cyane. Ariko, probe y'ubuso iragengwa n'uburyo bwayo bwo guhuza kandi biragoye kuyihuza n'ibindi bikoresho bya optoelectronic. Kubera iyo mpamvu, hamwe no kunoza ibisabwa mu guhuza ibikoresho bya optoelectronic, ibikoresho bipima amashusho bya InGaAs bihujwe na waveguide bifite imikorere myiza kandi bikwiriye guhuzwa byagiye biba intandaro y’ubushakashatsi, aho module za InGaAs photoprobe za 70 GHz na 110 GHz hafi ya zose zikoresha imiterere ihujwe na waveguide. Dukurikije ibikoresho bitandukanye bya substrate, probe ya waveguide ya InGaAs photoelectric probe ishobora kugabanywamo ibyiciro bibiri: InP na Si. Ibikoresho bya epitaxial kuri substrate ya InP bifite ubuziranenge kandi birakwiriye cyane mu gutegura ibikoresho bigezweho. Ariko, ukudahuza gutandukanye hagati y’ibikoresho bya III-V, ibikoresho bya InGaAs na substrate za Si byakuriye cyangwa bifatanye kuri substrate za Si bituma ibikoresho cyangwa interface biba bibi cyane, kandi imikorere y’igikoresho iracyafite umwanya munini wo kunoza.