Imirongo iri hejurumodulator y'amashanyarazi n'amataran'ikoreshwa rya fotoni muri microwave
Kubera ko sisitemu z'itumanaho zigenda ziyongera, kugira ngo harusheho kunozwa uburyo bwo kohereza ibimenyetso, abantu bazahuza fotoni na electron kugira ngo bagere ku nyungu zuzuzanya, kandi hazavuka fotoniki za microwave. Modulator y'amashanyarazi irakenewe kugira ngo amashanyarazi ahindurwe mu buryo bw'urumuri murisisitemu zo gufotora muri mikoroonde, kandi iyi ntambwe y'ingenzi ikunze kugena imikorere ya sisitemu yose. Kubera ko guhindura ikimenyetso cya radiyo kikajya kuri optique ari inzira y'ibimenyetso bya analog, kandi bisanzwemodulators z'amashanyarazi n'amatarabifite ubusumbane busanzwe, hari uburyo bukomeye bwo guhindura ibimenyetso. Kugira ngo habeho uburyo bwo guhindura umurongo ukurikije umurongo, aho modulator ikorera akenshi hashyirwa ahantu hagenwa n'umurongo ugororotse, ariko ntibishobora kuzuza ibisabwa na microwave photon link kugira ngo modulator ifatanye. Modulator za electro-optic zifite umurongo ugororotse zikenewe byihutirwa.
Uburyo bwo guhindura imiterere y’ibipimo bya silikoni bwihuta cyane bukunze kugerwaho n’ingaruka za FCD (free carrier plasma dispersion). Impinduka za FCD na PN junction modulation byombi ntabwo biri ku murongo umwe, bigatuma silicon modulator idakoresha umurongo umwe ugereranije na lithium niobate modulator. Ibikoresho bya Lithium niobate bigaragaza neza cyane.modulation y'amashanyarazi n'amataraImiterere yabyo bitewe n’ingaruka za Pucker. Muri icyo gihe, ibikoresho bya lithium niobate bifite ibyiza byo kuba bifite bandwidth nini, imiterere myiza yo guhindura ibintu, igihombo gito, guhuza byoroshye no guhuza na semiconductor process, gukoresha lithium niobate ya thin film kugira ngo hakorwe modulator ya electro-optical ifite imikorere myiza, ugereranije na silicon hafi ya "short plate", ariko kandi kugira ngo habeho umurongo mwiza. Modulator ya electro-optic ya thin film lithium niobate (LNOI) kuri insulator yabaye icyerekezo cyiza cy’iterambere. Hamwe n’iterambere ry’ikoranabuhanga ryo gutegura ibikoresho bya lithium niobate ya thin film hamwe n’ikoranabuhanga ryo gushushanya amajwi, imikorere myiza yo guhindura ibintu hamwe no guhuza cyane modulator ya thin film lithium niobate ya electro-optic yabaye urwego rw’amashuri makuru mpuzamahanga n’inganda.
Ibiranga icyuma gito cya lithium niobate
Muri Leta Zunze Ubumwe za Amerika, DAP AR yagennye isuzuma rikurikira ku bikoresho bya lithium niobate: niba ikigo cy’impinduka y’ikoranabuhanga cyitiriwe ibikoresho bya silikoni bituma bishoboka, aho impinduramatwara ya photonics yavukiye hashobora kwitirirwa lithium niobate. Ibi biterwa nuko lithium niobate ihuza ingaruka za electro-optical, ingaruka za acousto-optical, ingaruka za piezoelectric, ingaruka za thermoelectric n’ingaruka za photorefractive muri kimwe, kimwe n’ibikoresho bya silikoni mu rwego rwa optique.
Ku bijyanye n'imiterere y'urumuri rw'amashanyarazi, ibikoresho bya InP bifite igihombo kinini cyo kohereza kuri chip bitewe n'uburyo urumuri rwinjizwa mu gice gisanzwe cya 1550nm. SiO2 na silicon nitride bifite imiterere myiza yo kohereza, kandi igihombo gishobora kugera ku rwego rwa ~ 0.01dB/cm; Kuri ubu, igihombo cya waveguide cya thin-film lithium niobate waveguide gishobora kugera ku rwego rwa 0.03dB/cm, kandi igihombo cya thin-film lithium niobate waveguide gishobora kugabanuka kurushaho hamwe n'iterambere rihoraho ry'urwego rw'ikoranabuhanga mu gihe kizaza. Kubwibyo, ibikoresho bya thin-film lithium niobate bizagaragaza imikorere myiza ku miterere y'urumuri rudakoreshejwe nk'inzira ya photosynthetic, shunt na microring.
Ku bijyanye no gutanga urumuri, InP yonyine ni yo ifite ubushobozi bwo gutanga urumuri mu buryo butaziguye; Kubwibyo, kugira ngo hakoreshwe fotoni za mikoroonde, ni ngombwa kwinjiza isoko y'urumuri ishingiye kuri InP kuri chip ya LNOI ishingiye kuri photonic integrated binyuze mu gusudira inyuma cyangwa gukura kwa epitaxial. Ku bijyanye no guhindura urumuri, byashimangiwe haruguru ko ibikoresho bya lithium niobate byoroshye kugera ku buryo bworoshye bwo guhindura uburebure, voltage ntoya ya half-wave no gutakaza ubushobozi bwo kohereza amakuru make kurusha InP na Si. Byongeye kandi, umurongo munini w'imikorere ya electro-optical ya thin film lithium niobate ni ingenzi ku bikorwa byose bya fotoni za mikoroonde.
Ku bijyanye no gukoresha uburyo bwa optique, uburyo bwa electro-optical bwihuta cyane bw’ibikoresho bya lithium niobate bifata ingufu nyinshi bituma LNOI ikoresha uburyo bwa optique bushobora guhindura uburyo bwa optique bwihuta cyane, kandi ingufu zikoreshwa muri ubwo buryo bwo guhindura uburyo bwihuta nazo ni nke cyane. Ku bijyanye n’ikoranabuhanga rya microwave fotoni rihuriweho, chip ikoresha uburyo bwa optique ifite ubushobozi bwo guhindura uburyo bwihuta cyane kugira ngo ihuze n’ibikenewe mu gupima amashanyarazi vuba, kandi imiterere y’ikoreshwa ry’ingufu nke cyane ihuye neza n’ibisabwa cyane na sisitemu nini ya phased array. Nubwo uburyo bwa optique bukoresha InP bushobora kandi guhindura uburyo bwa optique bwihuta cyane, buzatera urusaku rwinshi, cyane cyane iyo switch ya optique y’urwego rwinshi igabanutse, ingano y’urusaku izagabanuka cyane. Ibikoresho bya silicon, SiO2 na silicon nitride bishobora guhindura inzira za optique binyuze mu ngaruka za thermo-optical cyangwa ingaruka zo gukwirakwiza, bifite ingaruka mbi zo gukoresha ingufu nyinshi no gutinda guhindura. Iyo ingano ya phased array ari nini, ntishobora kuzuza ibisabwa mu gukoresha ingufu.
Ku bijyanye no kongera imbaraga mu ikoranabuhanga,amplifier y'urumuri rw'ibice bibiri (SOA) ishingiye kuri InP imaze igihe kinini ikoreshwa mu bucuruzi, ariko ifite ingaruka mbi zo kuba ifite urusaku rwinshi hamwe n’imbaraga nke zo gusohora, ibyo bikaba bidafasha gukoresha fotoni za microwave. Uburyo bwo kuzamura imiterere y’amashanyarazi bwa thin-film lithium niobate waveguide bushingiye ku gukora no guhindura imiterere y’amashanyarazi buri gihe bushobora gutuma habaho urusaku ruto n’imbaraga nyinshi zo kongera imiterere y’amashanyarazi kuri chip, ibyo bikaba bishobora kuzuza ibisabwa n’ikoranabuhanga rya fotoni za microwave zihujwe mu kuzamura imiterere y’amashanyarazi kuri chip.
Mu bijyanye no kubona urumuri, lithium niobate y'icyuma gifata urumuri ifite imiterere myiza yo kohereza urumuri mu gice cya 1550 nm. Imikorere yo guhindura amashanyarazi ntabwo igerwaho, bityo rero ku bijyanye no gukoresha fotoni muri mikoroonde, kugira ngo ihuze n'ibikenewe byo guhindura amashanyarazi kuri chip. InGaAs cyangwa Ge-Si detection units zigomba gushyirwa kuri LNOI based photonic integrated chips binyuze mu gusudira inyuma cyangwa gukura kwa epitaxial. Mu bijyanye no guhuza na fibre optique, kubera ko fibre optique ubwayo ari ibikoresho bya SiO2, field ya SiO2 waveguide ifite urwego rwo hejuru rwo guhuza n'field ya fibre optique, kandi coupling niyo yoroshye cyane. Umurambararo wa mode wa waveguide ifite limited cyane ya thin film lithium ni hafi 1μm, bitandukanye cyane n'field ya mode ya fibre optique, bityo hagomba gukorwa ihinduka ry'ahantu nyaryo kugira ngo hahuzwe na mode ya fibre optique.
Ku bijyanye no guhuza, niba ibikoresho bitandukanye bifite ubushobozi bwo guhuza bwinshi biterwa ahanini n'uburebure bw'umuyoboro w'amazi (biterwa n'aho umuyoboro w'amazi ugarukira). Umuyoboro w'amazi ugenzurwa cyane wemerera umuyoboro muto wo guhuza, ibyo bikaba byoroshye mu gushyira hamwe cyane. Kubwibyo, imiyoboro y'amazi ya lithium niobate ifite ubushobozi bwo kugera ku guhuza cyane. Kubwibyo, kugaragara kwa lithium niobate ifite icyuma gito bituma ibikoresho bya lithium niobate bigira uruhare mu "silicon" y'urumuri. Ku bijyanye no gukoresha fotoni za mikoroonde, ibyiza bya lithium niobate ifite icyuma gito biragaragara cyane.
Igihe cyo kohereza: 23 Mata 2024





