Hasi ntarengwa ya infragre ya avalanche Photodetector

Inzira ntoyaifoto ya avalanche

Photodetector ya infragre ya avalanche (APD ifotora) ni icyiciro cyaibikoresho bya semiconductor ibikoresho byamashanyarazizitanga inyungu nyinshi binyuze mu kugongana ionisiyoneri, kugirango ugere kubushobozi bwo gutahura fotone nkeya cyangwa na fotone imwe. Nyamara, muburyo busanzwe bwa fotodetekeri ya APD, uburyo bwo gukwirakwiza abatwara ibinyabiziga bidafite uburinganire butera imbaraga zo gutakaza ingufu, kuburyo umuyaga wa avalanche winjiza mubusanzwe ukenera kugera kuri 50-200 V. Ibi birashyira ibyifuzo byinshi kumashanyarazi yumuriro wigikoresho hamwe nigishushanyo mbonera cy’ibisomwa, kongera ibiciro no kugabanya porogaramu nyinshi.

Vuba aha, ubushakashatsi bw’Abashinwa bwerekanye imiterere mishya y’urubura hafi ya disiketi ya infragre hamwe na voltage nkeya ya voltage na sensibilité nyinshi. Ukurikije kwikorera-doping homojunction ya atome layer, Photodetector ya avalanche ikemura ikwirakwizwa ryangiza ryatewe na defekt ya interineti idashobora kwirindwa muburyo butandukanye. Hagati aho, amashanyarazi akomeye ya "peak" yumuriro uterwa no guhinduranya impinduramatwara akoreshwa mugutezimbere imikoranire ya coulomb hagati yabatwara, guhagarika uburyo bwa fonon itari mu ndege yiganjemo gutatanya, kandi bigera ku ntera yikubye kabiri abatwara ibinyabiziga bitaringaniye. Ku bushyuhe bwicyumba, ingufu zinjira hafi yurugero rwamahame ya Eg (Eg ni intera ya bande ya semiconductor) kandi ibyiyumvo byo gutahura ibyuma bifata ibyuma bya infragre bigera kuri 10000.

Ubu bushakashatsi bushingiye kuri atom-layer yikorewe-tungsten sicklenide (WSe₂) homojunction (ibyuma bibiri byinzibacyuho ya chalcogenide, TMD) nkuburyo bwo kunguka ibicuruzwa bitwara abantu. Gucamo ibice byahinduwe bigereranywa no gushushanya imiterere yimiterere ya topografiya kugirango itere umurima ukomeye wamashanyarazi "spike" kumurongo wa mutant homojunction interface.

Byongeye kandi, umubyimba wa atome urashobora guhagarika uburyo bwo gutatanya bwiganjemo uburyo bwa fonon, kandi bukamenya uburyo bwo kwihuta no kugwiza ibintu bitwara ibinyabiziga bitaringaniye hamwe nigihombo gito cyane. Ibi bizana ingufu za avalanche zingana nubushyuhe bwicyumba hafi yumupaka wa teoretiki ni ukuvuga igice cya semiconductor material bandgap Eg. Umuvuduko w'amashanyarazi wa avalanche wagabanutse uva kuri 50 V ugera kuri 1,6 V, bituma abashakashatsi bakoresha imiyoboro ikuze ya voltage ikuze kugira ngo batware inkangu.gufotorakimwe no gutwara diode na transistors. Ubu bushakashatsi butahura uburyo bwiza bwo guhindura no gukoresha ingufu zitwara ibinyabiziga bitaringaniye hifashishijwe igishushanyo mbonera cyo kugwiza inkangu nkeya, gitanga icyerekezo gishya cyiterambere ryibisekuruza bizaza byunvikana cyane, bitarenze urugero kandi byunguka byinshi bya tekinoroji ya avalanche.