Iterambere ryubushakashatsi bwa InGaAs Photodetector

Iterambere ryubushakashatsi bwaInGaAs Photodetector

Hamwe nubwiyongere bukabije bwikwirakwizwa ryamakuru yitumanaho, tekinoroji yo guhuza imiyoboro yasimbuye ikoranabuhanga gakondo ry’amashanyarazi kandi ryabaye ikoranabuhanga ryibanze ryogukoresha intera ndende kandi ndende-yo-gutakaza-kwihuta kwihuta. Nka shingiro ryibanze rya optique yakira iherezo, igufotoraifite byinshi bisabwa hejuru kubikorwa byayo byihuse. Muri byo, fotodetektor ya waveguide ni ntoya mubunini, hejuru yumurongo mugari, kandi byoroshye guhuzwa kuri chip hamwe nibindi bikoresho bya optoelectronic, aribwo bushakashatsi bwibanze kuri Photodetection yihuta. kandi ni fotodeteri ihagarariwe cyane mugice cyitumanaho rya infragre.

InGaAs nimwe mubikoresho byiza byo kugera ku muvuduko mwinshi kandiPhotodetector-isubiza cyane. Ubwa mbere, InGaAs ni ibikoresho bya semiconductor itaziguye, kandi ubugari bwayo burashobora kugengwa nigipimo kiri hagati ya In na Ga, bigafasha kumenya ibimenyetso bya optique byuburebure butandukanye. Muri byo, In0.53Ga0.47Nkuko bihuye neza na latike ya InP substrate kandi ifite coeffisiyoneri yo kwinjiza cyane murwego rwo gutumanaho optique. Nibikoreshwa cyane mugutegura fotodetector kandi ifite nuburyo bugaragara bwumwijima kandi bwitwara neza. Icya kabiri, ibikoresho bya InGaAs na InP bifite umuvuduko mwinshi wa elegitoronike, hamwe numuvuduko wa electron wuzuye wuzuye hafi ya 1 × 107cm / s. Hagati aho, munsi yumuriro wamashanyarazi, ibikoresho bya InGaAs na InP byerekana ingaruka za elegitoronike yumuvuduko ukabije, hamwe n umuvuduko wazo wagera kuri 4 × 107cm / s na 6 × 107cm / s. Nibyiza kugera kumurongo muremure wambukiranya. Kugeza ubu, InGaAs ifotora ni yo nzira nyamukuru yerekana amafoto yo gutumanaho neza. Gitoya-nini, inyuma-ibyabaye, hamwe nubushakashatsi bwimbitse bwikurikiranabikorwa nabyo byatejwe imbere, bikoreshwa cyane mubisabwa nkumuvuduko mwinshi no kwiyuzuza cyane.

Ariko, kubera imbogamizi zuburyo bwabo bwo guhuza, ibyuma byerekana ibintu biragoye guhuza nibindi bikoresho bya optoelectronic. Kubwibyo, hamwe nubwiyongere bukenewe bwo guhuza optoelectronic, waveguide ihujwe na InGaAs fotodetekeri hamwe nibikorwa byiza kandi bikwiranye no kwishyira hamwe byahindutse intumbero yubushakashatsi. Muri byo, ubucuruzi bwa InGaAs mododetector modul ya 70GHz na 110GHz hafi ya zose zifata ibyuma bifatanyiriza hamwe. Ukurikije itandukaniro ryibikoresho bya substrate, waveguide ifatanye na InGaAs fotodetekeri irashobora gushyirwa mubice bibiri: bishingiye kuri INP na Si. Ibikoresho epitaxial kuri InP substrates bifite ubuziranenge kandi birakwiriye muguhimba ibikoresho bikora neza. Ariko, kubikoresho bya matsinda ya III-V byakuze cyangwa bihujwe kuri Si substrate, kubera kudahuza gutandukanye hagati yibikoresho bya InGaAs na Si substrates, ubwiza bwibintu cyangwa interineti birakennye cyane, kandi haracyari umwanya munini wo kunoza imikorere yibikoresho.

Igikoresho gikoresha InGaAsP aho gukoresha InP nkibikoresho byo mukarere ka depletion. Nubwo igabanya umuvuduko wuzuye wa electrone kurwego runaka, itezimbere guhuza urumuri rwibyabaye kuva kumurongo kugeza mukarere. Muri icyo gihe, InGaAsP N ubwoko bwitumanaho bwakuweho, kandi hagaragara icyuho gito kuri buri ruhande rwubuso bwa P, bikazamura neza inzitizi kumurima. Nibyiza kubikoresho bigera kumurongo wo hejuru.