Imiterere ya InGaAs Photodetector

Imiterere yaInGaAs Photodetector

Kuva mu myaka ya za 1980, abashakashatsi bo mu gihugu ndetse no hanze yarize ku miterere ya Photodetector ya InGaAs, igabanijwemo ubwoko butatu. Nibikoresho bya InGaAs-Semiconductor-ibyuma bifotora (MSM-PD), InGaAs PIN Photodetector (PIN-PD), na InGaAs Avalanche Photodetector (APD-PD). Hariho itandukaniro rigaragara mubikorwa byo guhimba nigiciro cya InGaAs fotodetekeri hamwe nuburyo butandukanye, kandi hariho itandukaniro rikomeye mumikorere yibikoresho.

InGaAs icyuma-semiconductor-icyumagufotora, yerekanwe ku gishushanyo (a), ni imiterere idasanzwe ishingiye ku ihuriro rya Schottky. Mu 1992, Shi n'abandi. yakoresheje umuvuduko muke wicyuma-organic vapor phase epitaxy tekinoroji (LP-MOVPE) kugirango ikure epitaxy kandi itegura InGaAs MSM Photodetector, ifite reaction nyinshi ya 0.42 A / W kumuraba wumurambararo wa 1,3 mm hamwe numuyoboro wijimye uri munsi ya 5.6 pA / μm² kuri 1.5 V. Muri 1996, zhang n'abandi. yakoresheje icyiciro cya gaze ya molekulari yamashanyarazi (GSMBE) kugirango akure InAlAs-InGaAs-InP epitaxy layer. Igice cya InAlAs cyerekanaga ibimenyetso biranga ubukana bwinshi, kandi imiterere yo gukura yarushijeho kuba mwiza mugupima X-ray itandukanya, kuburyo kudahuza lattice hagati ya InGaAs na InAlAs byari murwego rwa 1 × 10⁻³. Ibi bisubizo mubikorwa byogukora neza hamwe numwijima uri munsi ya 0,75 pA / μm² kuri 10 V hamwe nigisubizo cyihuse kigera kuri 16 ps kuri 5 V. Muri rusange, imiterere ya fotodetekeri ya MSM iroroshye kandi yoroshye guhuza, yerekana umuyaga mwinshi wijimye (pA gutondekanya), ariko icyuma cya electrode izagabanya ahantu heza ho kwinjiza urumuri rwibikoresho, igisubizo rero kiri munsi yizindi nzego.

Photodetector ya InGaAs PIN yinjizamo urwego rwimbere hagati ya P yo guhuza ubwoko bwa P nubwoko bwa N bwo guhuza, nkuko bigaragara ku gishushanyo (b), cyongera ubugari bwakarere ka depletion, bityo kikaba cyerekana imirasire myinshi ya elegitoroniki kandi kigakora a binini bifotora, bityo bifite imikorere myiza ya electron. Muri 2007, A.Poloczek n'abandi. yakoresheje MBE kugirango akureho ubushyuhe buke bwo mu rwego rwo kunoza ubuso bwo hejuru no gutsinda itandukaniro riri hagati ya Si na InP. MOCVD yakoreshejwe muguhuza InGaAs PIN imiterere ya substrate ya InP, kandi igisubizo cyigikoresho cyari 0.57A / W. Mu mwaka wa 2011, Laboratoire y’ingabo (ALR) yakoresheje imashini ifotora ya PIN yiga amashusho ya liDAR yo kugendagenda, kwirinda inzitizi / kugongana, hamwe no kumenya intego ndende yo kumenya / kumenyekanisha ibinyabiziga bito bitagira abapilote, bihujwe na chip ya microwave amplifier chip ihendutse yazamuye cyane igipimo cyerekana-urusaku rwa InGaAs PIN ifotora. Hashingiwe kuri ibyo, muri 2012, ALR yakoresheje iyi mashusho ya liDAR kuri robo, ifite intera irenga 50 m kandi ikemurwa na 256 × 128.

InGaAsifoto ya avalancheni ubwoko bwa Photodetector hamwe ninyungu, imiterere yabyo igaragara mubishusho (c). Umuyoboro wa electron-umwobo ubona imbaraga zihagije mugikorwa cyumuriro wamashanyarazi imbere mukarere kikubye kabiri, kugirango uhure na atome, ubyare amashanyarazi mashya ya elegitoronike, ugire ingaruka ya avalanche, kandi ugwize abatwara ibingana mubikoresho . Muri 2013, George M yakoresheje MBE kugirango akure lattice ihuye na InGaAs na InAlAs alloys kuri InP substrate, akoresheje impinduka mumiterere ya alloy, umubyimba wa epitaxial, hamwe na doping yingufu zitwara abagenzi kugirango bigabanye ionisiyoneri mugihe hagabanijwe ionisiyoneri. Mugihe cyo gusohora ibimenyetso bihwanye, APD yerekana urusaku rwo hasi hamwe numwijima wo hasi. Muri 2016, Sun Jianfeng n'abandi. yubatsemo 1570 nm laser ikora amashusho yerekana amashusho ashingiye kuri InGaAs avalanche Photodetector. Inzira y'imbere yaAPD ifotorayakiriye echo kandi isohora mu buryo butaziguye ibimenyetso bya digitale, bigatuma igikoresho cyose cyegeranye. Ibisubizo byubushakashatsi byerekanwe muri FIG. (d) na (e). Igishushanyo (d) nifoto ifatika yintego yo gufata amashusho, naho Ishusho (e) ni ishusho yintera-eshatu. Birashobora kugaragara neza ko idirishya ryakarere ka c rifite intera ndende yimbitse hamwe nakarere A na b. Ihuriro rimenya ubugari bwa pulse munsi ya 10 ns, ingufu za pulse imwe (1 ~ 3) mJ ihindurwa, yakira lens field Inguni ya 2 °, inshuro zisubiramo za 1 kHz, igipimo cya detector kingana na 60%. Bitewe ninyungu yimbere ya APD imbere, igisubizo cyihuse, ingano yoroheje, iramba hamwe nigiciro gito, Photodetector ya APD irashobora kuba gahunda yubunini burenze igipimo cyo gutahura kurusha PIN ifotora, bityo rero ubu LiDAR nyamukuru yiganjemo ahanini ifotora ya avalanche.

Muri rusange, hamwe niterambere ryihuse rya tekinoroji yo gutegura InGaAs mugihugu ndetse no hanze yarwo, turashobora gukoresha ubuhanga MBE, MOCVD, LPE nubundi buryo bwikoranabuhanga kugirango dutegure ahantu hanini cyane hujuje ubuziranenge bwa InGaAs epitaxial layer kuri InP substrate. InGaAs Photodetector yerekana umuyaga mwinshi wijimye kandi witabira cyane, umuyoboro wijimye wo hasi uri munsi ya 0,75 pA / μm², ibisubizo ntarengwa bigera kuri 0.57 A / W, kandi bifite igisubizo cyihuse (gahunda ya ps). Iterambere ryizaza rya InGaAs ifotora izibanda kubintu bibiri bikurikira: (1) InGaAs epitaxial layer ikura neza kuri Si substrate. Kugeza ubu, ibyinshi mu bikoresho bya elegitoroniki ku isoko bishingiye kuri Si, kandi iterambere ryakurikiyeho rya InGaAs na Si rishingiye ku cyerekezo rusange. Gukemura ibibazo nko kudahuza lattice no gutandukanya ubushyuhe bwa coefficient itandukaniro ningirakamaro mubushakashatsi bwa InGaAs / Si; . Hamwe no kwiyongera Mubigize, kudahuza lattice hagati ya InP substrate na InGaAs epitaxial layer bizatuma habaho dislokisiyo ikomeye kandi ifite inenge, bityo rero birakenewe ko uhindura ibipimo byibikoresho, kugabanya inenge ya lattice, no kugabanya igikoresho cyijimye.