Imiterere ya Ingaas Photodetector

Imiterere yaIngaa Photodetector

Kuva mu myaka ya za 1980, abashakashatsi bo mu rugo no mu mahanga bize imiterere y'amafoto y'abafotora ishami, bigabanijwe cyane mu bwoko butatu. Ni ib'aas ctal-semiconductor-semiconductor-ibyuma bya MSM-PD), Ingaas Pin Photodetector (PIN-PD), na Ingaas Avalanche Photodetetector (APD-PD). Hano hari itandukaniro ryingenzi mubikorwa byo guhimba hamwe nigiciro cyamafoto ya Ingaas hamwe ninzego zitandukanye, kandi hari kandi itandukaniro rinini mubikoresho.

Ingaas Icyuma-Semiconductor-ibyumaPhotodetetector, yerekanwe ku gishushanyo (a), ni inyubako idasanzwe ishingiye ku masangano ya Schotky. Mu 1992, Shi et al. yakoresheje igitutu gito-organic imyuka ya PEPORY COLOVEN (LP-ROMPE) kugirango akureho ibice bya 0,42 A / WIjimye kuri 1.5 V. muri 1996, Zhang et al. Ikoreshwa rya gazi Icyiciro cya Saam Epitaxy (GSMBE) kugirango ikureho Ingala-Ingaas-Inp Epitaxy. Igice cya Inala cyerekanaga ibiranga byinshi, kandi imiterere yo mu mikurire yateguwe na X-Ray Gupima Gukwirakwiza, kugira ngo hakomwogoshesha ibirango na inalas troice na inalas hari ibice bya 1 × 10⁻³. Ibi bivamo ibikorwa bya optiminained hamwe nuwijimye munsi ya 0.75 Pa / μm² kuri 10 v hamwe na electrode yijimye igera kuri 16 V. Kuri 5 V. Kuri electrode ihuza urumuri rwijimye.

Ingaas Pin Photodetector yinjizamo igice cyimbere hagati ya p-ubwoko hamwe nuburyo bwo guturika, nkuko bigaragara ku gishushanyo cya electron-hole nini, bityo ifite imikorere minini, bityo ifite imikorere minini ya electron. Muri 2007, A.POLOCSize et al. yakoresheje MB kugirango ikure ubushyuhe buke buffer layer kugirango itezimbere hejuru kandi itsinde lattice idahuye hagati ya si na thep. Mocvd yakoreshwaga mu guhuza imiterere ya PIN kuri INP sustrate ya INP, kandi yitabiriye iki gikoresho yari hafi 0.57a / w. Muri 2011, laboratoire y'ingabo (alr) yakoresheje amafoto ya PIN kwiga Lidar Mlipation, ihuriweho na microwave Amplifier ya Amplifier ya Amplifier ya Amplifier ya Amplifier ya Amplifier ya Amplifier ya Amplifier-kuri-urusaku. Muri 2012, muri 2012, Alr yakoresheje iyi lidar iSager kuri robo, hamwe no kumenya inshuro zirenga 50 na 256 × 128.

IngaasAvalanche Photodetetectorni ubwoko bwafotora hamwe ninyungu, imiterere yerekana ishusho (c). Abashakanye ba Electron-boodron babona imbaraga zihagije munsi yumurima wamashanyarazi imbere ya atome, kugirango bahure na atome, bikora imyuka mishya ya elegi, ikore ingaruka mbi za elegi, bagakora ingaruka zidasanzwe za elegi, zikora ingaruka zidasanzwe za elegi, kandi zigwiza abatwara ibicuruzwa bitaringaniye mubikoresho. Muri 2013, George M yakoresheje MB kugirango ikure irwaas na inalas alloys kuri inp sustrates, hamwe nubunini bwa eyloy. Ku nyungu zihwanye n'ibisohoka, APD yerekana urusaku rwo hasi no hepfo yijimye. Muri 2016, izuba jianfeng et al. Yubatswe urutonde rwa 1570 nm laser ikora amashusho yubushakashatsi bushingiye kuri Ingaas Avalanche Photodetetector. Umuzunguruko w'imbereAPD Photodetetectoryakiriye amajwi no gusohoka mu buryo butaziguye ibimenyetso bya digitale, kora ibikoresho byose byoroshye. Ibisubizo byubushakashatsi byerekanwe ku gishushanyo. (d) na (e). Igishushanyo (D) ni ifoto yumubiri yintego yerekana, kandi ishusho (e) ni ishusho yintera eshatu. Irashobora kugaragara neza ko idirishya ryakarere c rifite intera ndende hamwe n'akarere a na b. Ihuriro rivuga ubugari bwa Pulse munsi ya 10 ns, ingufu zose za pulse (1 ~ 3) MJ Inguni yo mu murima wa 2 °, gusubiramo inshuro 1 KHZ, Ikigereranyo Cyiza cya 60%. Urakoze ku nyungu zimbere za APD, igisubizo cyihuse, ubunini bwihuse, kuramba hamwe nibiciro bigufi birashobora kuba gahunda yubunini bwiganjemo ibice bya PIN byiganjemo amafoto ya Avalanche.

Muri rusange, hamwe niterambere ryihuse ryikoranabuhanga ryo gutegura Ingaas murugo ndetse no mumahanga, dushobora gukoresha ubuhanga bwa MBE, MOCVD, lPE hamwe nizindi ikoranabuhanga kugirango dutegure igice kinini-cyiza cya Ingaas Epitax Rep Igipimo cya Ingaas. Amafoto ya Ingaas yerekana ubushyuhe buke kandi bwihishe, ikibanza cyo hasi cyijimye kiri munsi ya 0.75 parent. Iterambere ry'ejo hazaza ry'amafoto ya Ingaas rizibanda ku bintu bibiri bikurikira: (1) Ingaas EpItaxial Land ihingwa ku buryo butaziguye kuri si. Kugeza ubu, ibyinshi mu bikoresho bya microelectronike ku isoko ni ubu si bushingiye, kandi hakurikijwe iterambere rya Ingaas na SI rishingiye kuri rusange. Gukemura ibibazo nkibisobanuro bya lattice bihuye nibice bya thermal coanter ni ngombwa kugirango ukoreshe Ingaas / Si; . With the increase of In components, the lattice mismatch between InP substrate and InGaAs epitaxial layer will lead to more serious dislocation and defects, so it is necessary to optimize the device process parameters, reduce the lattice defects, and reduce the device dark current.